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PBYR1020CTD 数据表(PDF) 1 Page - NXP Semiconductors |
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PBYR1020CTD 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR1025CTD series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 20 V/ 25 V • Reverse surge capability • High thermal cycling performance I O(AV) = 10 A • Low thermal resistance V F ≤ 0.4 V GENERAL DESCRIPTION PINNING SOT428 Dual schottky rectifier diodes PIN DESCRIPTION intended for use as output rectifiers in low voltage, high frequency 1 anode 1 switched mode power supplies. 2 cathode 1 The PBYR1025CTD series is supplied in the SOT428 surface 3 anode 2 mounting package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR10 20CTD 25CTD V RRM Peak repetitive reverse - 20 25 V voltage V RWM Working peak reverse - 20 25 V voltage V R Continuous reverse voltage T mb ≤ 107 ˚C - 20 25 V I O(AV) Average rectified output square wave; δ = 0.5; T mb ≤ 136 ˚C - 10 A current (both diodes conducting) I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 136 ˚C - 10 A current per diode I FSM Non-repetitive peak forward t = 10 ms - 90 A current per diode t = 8.3 ms - 100 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a1 a2 13 2 1 2 3 tab 1 it is not possible to make connection to pin 2 of the SOT428 package February 1998 1 Rev 1.000 |
类似零件编号 - PBYR1020CTD |
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类似说明 - PBYR1020CTD |
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