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PBYR1025D 数据表(PDF) 2 Page - NXP Semiconductors |
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PBYR1025D 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR1025D series Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 2 K/W to mounting base R th j-a Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W to ambient board ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 10 A; Tj = 125˚C - 0.33 0.41 V I F = 20 A; Tj = 125˚C - 0.43 0.55 V I F = 20 A - 0.51 0.6 V I R Reverse current V R = VRWM -1 5 mA V R = VRWM; Tj = 100˚C - 22 40 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 700 - pF April 1998 2 Rev 1.000 |
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