Philips Semiconductors

Product specification

Rectifier diodes

PBYR1025D series

Schottky barrier

Fig.1. Maximum forward dissipation P

square current waveform where I

Fig.2. Maximum forward dissipation P

square current waveform where I

Fig.3. Typical and maximum forward characteristic

I

Fig.4. Typical reverse leakage current; I

parameter T

j

Fig.5. Typical junction capacitance; C

f = 1 MHz; T

Fig.6. Transient thermal impedance; Z

0

5

10

15

20

25

0

5

10

15

D = 1.0

0.5

0.2

0.1

PBYL1625

Rs = 0.009 Ohms

Vo = 0.32 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

T

I

D =

T

t

Tmb(max) / C

150

140

130

120

0

5

10

15

20

25

10uA

100uA

1mA

10mA

100mA

1A

PBYR2025CT

VR / V

IR / A

100

25

Tj = 150 C

125

75

50

0

5

10

15

0

2

4

6

8

10

12

a = 1.57

1.9

2.2

2.8

4

PBYL1625

Rs = 0.009 Ohms

Vo = 0.32 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Tmb(max) / C

150

146

142

138

134

130

126

1

10

100

100

1000

10000

PBYR2025CT

VR / V

Cd / pF

0

0.2

0.4

0.6

0.8

1

0

5

10

15

20

25

30

PBYR2025CT

VF / V

IF / A

Tj = 125 C

Tj = 25 C

typ

max

1us

10us

100us

1ms

10ms

100ms

1s

10s

0.001

0.01

0.1

1

10

PBYL1625

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

T

T

P

t

D

April 1998

3

Rev 1.000