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FGH40T65UPD 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 FGH40T65UPD
功能描述  Field-Stop Trench IGBT
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

FGH40T65UPD 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  FGH40T65UPD Datasheet HTML 1Page - Inchange Semiconductor Company Limited FGH40T65UPD Datasheet HTML 2Page - Inchange Semiconductor Company Limited FGH40T65UPD Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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ISG2044
eq FGH40T65UPD
Field-Stop Trench IGBT
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter
Breakdown
Voltage
VGE=0, IC= 1mA
650
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE, IC=40mA
4.0
6.0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 40A,
VCE= 15V
TC=25℃
--
1.65
2.3
V
TC=175℃
--
2.1
--
V
ICES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0
--
--
250
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V, VCE=0
--
--
±
400
nA
Cies
Input Capacitance
VGS = 0V,
VCS = 30V,
f = 1.0MHz
--
2732
--
pF
Coes
Output Capacitance
--
84
--
Cres
Reverse Transfer Capacitance
--
50
--
Qg
Total Gate Charge
VGE = 15V,
IC=40A,
VCE = 400V
--
180
--
nC
Qge
Gate-Emitter Charge
--
25
--
Qgc
Gate-Collector Charge
--
101
--
td(on)
Turn-on Delay Time
VGE = 15V,
IC= 40A,
VCE = 400V,
RG= 7Ω
TJ=25℃
--
20
--
ns
tr
Turn-on Rise Time
--
27
--
ns
td(off)
Turn-off Delay Time
--
145
--
ns
tf
Turn-off Fall Time
--
17
--
ns
Eon
Turn-on switching losses
--
1.60
--
mJ
Eoff
Turn-off switching losses
--
0.60
--
mJ
Ets
Total Switching Loss
--
2.20
--
mJ



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