IXFN21N100Q datasheet(1/3 Pages) ISC

部件名	IXFN21N100Q

功能描述	N-Channel MOSFET

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 3 page

ISFM1087

eq IXFN21N100Q

N-Channel MOSFET

www.iscsemi.com

1

DESCRIPTION

·

Drain Current -ID= 21A@ TC=25℃

·

Drain Source Voltage

-VDSS= 1000V(Min)

·

Static Drain-Source On-Resistance

-RDS(on) = 0.5Ω(Max)@VGS= 10V

APPLICATIONS

·

Switching application

·

DC-DC converters

·

Battery chargers

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

1000

V

VGSS

Gate-Source Voltage

±

20

V

ID

Drain Current-continuous@ TC=25℃

21

A

IDM

Pulse Drain Current

84

A

PD

Total Dissipation@TC=25℃

520

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.24

℃

/W

类似零件编号 - IXFN21N100Q

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN21N100Q	135Kb / 4P	HiPerFET TM Power MOSFETs Q-Class

More results

类似说明 - IXFN21N100Q

制造商	部件名	数据表	功能描述
Microsemi Corporation	APT6M100K	263Kb / 4P	N-Channel MOSFET
	APT24M120B2	407Kb / 4P	N-Channel MOSFET
	APT28M120B2	283Kb / 4P	N-Channel MOSFET
	APT34M60B	398Kb / 4P	N-Channel MOSFET
	APT34M120J	273Kb / 4P	N-Channel MOSFET
	APT41M80B2	265Kb / 4P	N-Channel MOSFET
	APT43M60B2	398Kb / 4P	N-Channel MOSFET
	APT58M50J	275Kb / 4P	N-Channel MOSFET
	APT66M60B2	398Kb / 4P	N-Channel MOSFET
KIA Semiconductor Techn...	2302	110Kb / 4P	P-CHANNEL MOSFET N-CHANNEL MOSFET