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STGF20M65DF2 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 STGF20M65DF2
功能描述  Trench gate Field-Stop IGBT
PDF  6 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

STGF20M65DF2 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  STGF20M65DF2 Datasheet HTML 1Page - Inchange Semiconductor Company Limited STGF20M65DF2 Datasheet HTML 2Page - Inchange Semiconductor Company Limited STGF20M65DF2 Datasheet HTML 3Page - Inchange Semiconductor Company Limited STGF20M65DF2 Datasheet HTML 4Page - Inchange Semiconductor Company Limited STGF20M65DF2 Datasheet HTML 5Page - Inchange Semiconductor Company Limited STGF20M65DF2 Datasheet HTML 6Page - Inchange Semiconductor Company Limited  
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background image
ISG2049
eq STGF20M65DF2
Trench gate Field-Stop IGBT
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case IGBT
4.6
℃
/W
Rth j-c
Thermal Resistance,Junction to Case diode
6.25
℃
/W
STATIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
VCES
Collector-Emitter Breakdown Voltage VGE=0, IC= 0.25mA
650
--
--
V
VGE(th)
Gate-Emitter Threshold Voltage
VGE= VCE, IC=0.5mA
5
6
7
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 20A, VCE= 15V,
TC=25℃
--
1.55
2.0
V
IC= 20A, VCE= 15V,
TC=125℃
--
1.95
--
V
IC=20A, VCE= 15V,
TC=175℃
--
2.1
--
V
ICES
Zero Gate Voltage Collector Current
VCE=650V, VGE=0
--
--
25
uA
IGES
Gate-Emitter Leakage Current
VGE=±20V, VCE=0
--
--
±
250
nA
DYNAMIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）
Cies
Input Capacitance
VGS = 0V,
VCS = 25V,
f = 1.0MHz
--
1705
--
pF
Coes
Output Capacitance
--
102
--
Cres
Reverse Transfer Capacitance
--
39
--
Qg
Total Gate Charge
VGE = 15V,
IC= 15A,
VCE = 520V
--
70
--
nC
Qge
Gate-Emitter Charge
--
20
--
Qgc
Gate-Collector Charge
--
29
--



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