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PBYR1040F 数据表(PDF) 2 Page - NXP Semiconductors |
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PBYR1040F 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR1045F, PBYR1045X series Schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V both terminals to external dustfree heatsink V isol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V both terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree C isol Capacitance from pin 1 to f = 1 MHz - 10 - pF external heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction with heatsink compound - - 5.5 K/W to heatsink R th j-a Thermal resistance junction in free air - 55 - K/W to ambient ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 10 A; Tj = 125˚C - 0.5 0.59 V I F = 20 A; Tj = 125˚C - 0.69 0.75 V I F = 20 A - 0.65 0.87 V I R Reverse current V R = VRWM - 0.2 1.3 mA V R = VRWM; Tj = 100˚C - 22 35 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 350 - pF July 1998 2 Rev 1.200 |
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