PBYR20100CTB datasheet(3/6 Pages) PHILIPS

3 / 6 page

Philips Semiconductors

Product specification

Rectifier diodes

PBYR20100CT, PBYR20100CTB series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV)) per

diode; square current waveform where

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV)) per

diode; sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current per diode;

R = f(VR); parameter Tj

Fig.5. Typical junction capacitance per diode;

d = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance per diode;

th j-mb = f(tp).

PBYR10100

IF(AV) / A

PF / W

Vo = 0.550 V

Rs = 0.015 Ohms

0.1

D = 1.0

0.5

0.2

Tmb / C

150

130

140

120

D =

100

0.1

0.01

IR / mA

VR/ V

PBYR10100

75 C

100 C

125 C

150 C

Tj = 50 C

PBYR10100

IF(AV) / A

PF / W

a = 1.57

1.9

2.2

2.8

Vo = 0.550 V

Rs = 0.015 Ohms

Tmb / C

150

130

134

138

142

146

100

10000

1000

100

Cd/ pF

VR/ V

PBYR20100CT

PBYR10100

VF / V

IF / A

0.5

1.5

Tj = 25 C

Tj = 125 C

Typ

Max

1us

10us

100us

1ms

10ms

100ms

10s

0.001

0.01

0.1

PBYR20100CT

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

November 1998

Rev 1.300

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