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PBYR2040CT 数据表(PDF) 2 Page - NXP Semiconductors |
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PBYR2040CT 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR2045CT, PBYR2045CTB series Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction per diode - - 2 K/W to mounting base both diodes - - 1.5 K/W R th j-a Thermal resistance junction SOT78 package in free air - 60 - K/W to ambient SOT404 package, pcb mounted, minimum - 50 - K/W footprint, FR4 board ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage per diode I F = 10 A; Tj = 125˚C - 0.45 0.57 V I F = 20 A; Tj = 125˚C - 0.64 0.72 V I F = 20 A - 0.64 0.84 V I R Reverse current per diode V R = VRWM - 0.3 1.3 mA V R = VRWM; Tj = 100˚C - 22 35 mA C d Junction capacitance per V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 380 - pF diode October 1998 2 Rev 1.400 |
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