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PBYR2100CT 数据表(PDF) 4 Page - NXP Semiconductors |
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PBYR2100CT 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page ![]() 1999 May 25 4 Philips Semiconductors Product specification Schottky barrier double diode PBYR2100CT GRAPHICAL DATA Fig.2 Average forward current derating curve. 1.2 0.8 0.4 0 I F(AV) (A) 0 40 80 120 160 T ( C) j o MSA897 MSA895 (1) (2) (3) (4) (5) 10 1 10 1 10 2 10 3 0 0.4 0.8 1.2 1.6 V (V) F I F (A) Fig.3 Forward current as a function of forward voltage; typical values. (1) Tamb =25 °C. (2) Tamb =85 °C. (5) Tamb = 150 °C. (3) Tamb = 100 °C. (4) Tamb = 125 °C. Fig.4 Reverse current as a function of reverse voltage; typical values. 10 1 100 0 MSA898 20 40 60 80 V (V) R IR (A) 10 2 10 3 10 4 10 5 10 6 (5) (4) (3) (2) (1) (1) Tamb =25 °C. (2) Tamb =85 °C. (5) Tamb = 150 °C. (3) Tamb = 100 °C. (4) Tamb = 125 °C. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 10 3 10 2 10 C 0 50 100 V (V) R MSA896 d (pF) f = 1 MHz. |
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