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PBYR2080CT 数据表(PDF) 1 Page - NXP Semiconductors |
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PBYR2080CT 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR20100CT, PBYR20100CTB series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 60 V/ 80 V/ 100 V • Reverse surge capability • High thermal cycling performance I O(AV) = 20 A • Low thermal resistance V F ≤ 0.7 V GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR20100CT series is supplied in the SOT78 conventional leaded package. The PBYR20100CTB series is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 1 3 anode 2 (a) tab cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR20 60CT 80CT 100CT PBYR20 60CTB 80CTB 100CTB V RRM Peak repetitive reverse - 60 80 100 V voltage V RWM Working peak reverse - 60 80 100 V voltage V R Continuous reverse voltage T mb ≤ 139 ˚C - 60 80 100 V I O(AV) Average rectified output square wave; δ = 0.5; - 20 A current (both diodes T mb ≤ 133 ˚C conducting) I FRM Repetitive peak forward square wave; δ = 0.5; - 20 A current per diode T mb ≤ 133 ˚C I FSM Non-repetitive peak forward t = 10 ms - 135 A current per diode t = 8.3 ms - 150 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current per diode limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C 1. It is not possible to make connection to pin 2 of the SOT404 package. k a1 a2 13 2 13 tab 2 12 3 tab November 1998 1 Rev 1.300 |
类似零件编号 - PBYR2080CT |
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类似说明 - PBYR2080CT |
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