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PBYR2040CTX 数据表(PDF) 2 Page - NXP Semiconductors |
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PBYR2040CTX 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR2045CTF, PBYR2045CTX series Schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Peak isolation voltage from SOT186 package; R.H. ≤ 65%; clean and - - 1500 V all terminals to external dustfree heatsink V isol R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 V all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree C isol Capacitance from pin 2 to f = 1 MHz - 10 - pF external heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction per diode - - 6 K/W to heatsink both diodes - - 5 K/W (with heatsink compound) R th j-a Thermal resistance junction in free air - 55 - K/W to ambient ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 10 A; Tj = 125˚C - 0.45 0.57 V I F = 20 A; Tj = 125˚C - 0.64 0.72 V I F = 20 A - 0.64 0.84 V I R Reverse current V R = VRWM - 0.3 1.3 mA V R = VRWM; Tj = 100˚C - 22 35 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 380 - pF October 1998 2 Rev 1.300 |
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