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PBYR2525CT 数据表(PDF) 2 Page - NXP Semiconductors |
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PBYR2525CT 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR2525CT series schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to per diode - - 1.5 K/W mounting base both diodes - - 1.0 K/W R th j-a Thermal resistance junction to in free air - 60 - K/W ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage (per diode) I F = 15 A; Tj = 125˚C - 0.33 0.41 V I F = 30 A; Tj = 125˚C - 0.43 0.50 V I F = 30 A - 0.51 0.60 V I R Reverse current (per diode) V R = VRRM - 2.0 10 mA V R = VRRM; Tj = 100 ˚C - 30 80 mA C d Junction capacitance (per f = 1MHz; V R = 5V; Tj = 25 ˚C to - 900 - pF diode) 125 ˚C January 1997 2 Rev 1.000 |
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