Philips Semiconductors

Product specification

Rectifier diodes

PBYR2525CT series

schottky barrier

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Dual nickel silicide schottky barrier

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

rectifier diodes in a plastic envelope

featuring low forward voltage drop

PBYR25-

20CT

25CT

and absence of stored charge. These

V

RRM

Repetitive peak reverse

20

25

V

devices

can

withstand

reverse

voltage

voltage

transients

and

have

V

F

Forward voltage

0.41

0.41

V

guaranteed reverse surge capability.

I

O(AV)

Average output current (both

30

30

A

The devices are intended for use in

diodes conducting)

switched mode power supplies with

3 V - 3.3 V outputs, or as or-ing

diodes in fault tolerant power supply

systems.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

anode 1 (a)

2

cathode (k)

3

anode 2 (a)

tab

cathode (k)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-20

-25

V

RRM

Repetitive peak reverse voltage

-

20

25

V

V

RWM

Crest working reverse voltage

-

20

25

V

V

R

Continuous reverse voltage

T

-

20

25

V

I

O(AV)

Average output current (both

square wave;

δ = 0.5;

-

30

A

diodes conducting)

T

I

O(RMS)

RMS output current (both

-

43

A

diodes conducting)

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

180

A

current, per diode

t = 8.3 ms

-

200

A

sinusoidal T

to surge; with reapplied

V

RRM(max)

I

t = 10 ms

-

162

A

I

RRM

Repetitive peak reverse current t

-

2

A

per diode

I

RSM

Non-repetitive peak reverse

t

2

A

current per diode

T

stg

Storage temperature

-65

175

˚C

T

j

Operating junction temperature

-

150

˚C

12 3

tab

k

a1

a2

13

2

January 1997

1

Rev 1.000