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STP40NF10 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP40NF10
功能描述  N-channel 100V - 0.025??- 50A TO-220 Low gate charge STripFET??II Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP40NF10 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP40NF10
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID = 250 µA, VGS = 0
100
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
1
µA
VDS=Max rating,TC=125°C
10
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 25A
0.025
0.028
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Forward transconductance
VDS = 15V, ID=28A
22
S
Ciss
Input capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
2180
pF
Coss
Output capacitance
298
pF
Crss
Reverse transfer
capacitance
83.7
pF
Qg
Total gate charge
VDD = 80V, ID = 50A,
VGS = 10V
(see Figure 14)
57.6
76
nC
Qgs
Gate-source charge
13.3
nC
Qgd
Gate-drain charge
17.5
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 50V, ID = 25A
RG =4.7Ω VGS = 10V
(see Figure 13)
21
46
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
VDD = 27V, ID = 40A,
RG =4.7Ω, VGS = 10V
(see Figure 13)
54
13
ns
ns



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