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PBYR725D 数据表(PDF) 1 Page - NXP Semiconductors |
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PBYR725D 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR725D series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 20 V/ 25 V • Reverse surge capability • High thermal cycling performance I F(AV) = 7.5 A • Low thermal resistance V F ≤ 0.4 V GENERAL DESCRIPTION PINNING SOT428 Schottky rectifier diodes intended PIN DESCRIPTION for use as output rectifiers in low voltage, high frequency switched 1 no connection mode power supplies. 2 cathode 1 The PBYR725D series is supplied in the SOT428 surface mounting 3 anode package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR7 20D 25D V RRM Peak repetitive reverse - 20 25 V voltage V RWM Working peak reverse - 20 25 V voltage V R Continuous reverse voltage T mb ≤ 119 ˚C - 20 25 V I F(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 138 ˚C - 7.5 A current I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 138 ˚C - 15 A current I FSM Non-repetitive peak forward t = 10 ms - 100 A current t = 8.3 ms - 110 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a tab 3 1 2 3 tab 1 it is not possible to make connection to pin 2 of the SOT428 package February 1998 1 Rev 1.000 |
类似零件编号 - PBYR725D |
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类似说明 - PBYR725D |
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