Philips Semiconductors

Product specification

Rectifier diodes

PBYR745X series

schottky barrier

Fig.1. Maximum forward dissipation P

square current waveform where I

Fig.2. Maximum forward dissipation P

sinusoidal current waveform where a = form

factor = I

Fig.3. Typical and maximum forward characteristic

I

Fig.4. Typical reverse leakage current; I

parameter T

j

Fig.5. Typical junction capacitance; C

f = 1 MHz; T

Fig.6. Transient thermal impedance; Z

02468

10

12

0

1

2

3

4

5

6

7

8

D = 1.0

0.5

0.2

0.1

PBYR745F

IF(AV) / A

PF / W

150

144.5

139

133.5

128

122.5

117

111.5

106

Ths(max) / C

D =

T

T

t

I

Vo = 0.419

Rs = 0.015

0

25

50

100

10

1

0.1

0.01

IR / mA

VR/ V

PBYR745

75 C

100 C

125 C

150 C

Tj = 50 C

01

23

456

78

0

1

2

3

4

5

a = 1.57

1.9

2.2

2.8

4

PBYR745

IF(AV) / A

PF / W

Ths(max) / C

150

144.5

139

133.5

128

122.5

Vo = 0.419

Rs = 0.015

1

10

100

10

1000

100

Cd / pF

VR / V

PBYR745

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0

10

20

30

40

50

PBYR745

VF / V

IF / A

Tj = 25 C

Tj = 125 C

max

typ

10

1

0.1

0.01

10us

1ms

0.1s

10s

tp / s

Zth j-hs (K/W)

P

t

D

August 1996

3

Rev 1.000