IRFIZ34VPbF

11/13/03

Parameter

Max.

Units

20

14

A

Pulsed Drain Current



120

Power Dissipation

30

W

Linear Derating Factor

0.20

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚…

81

mJ

Avalanche Current



30

A

Repetitive Avalanche Energy



3.0

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ…

4.5

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

1

S

D

G

TO-220 Full-Pak

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to

using a 100 micron mica barrier with standard TO-220

product. The Fullpak is mounted to a heatsink using a

single clip or by a single screw fixing.

Description

PD - 94841

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

5.0

Junction-to-Ambient

–––

65

°C/W