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PCB2421 数据表(PDF) 13 Page - NXP Semiconductors |
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PCB2421 数据表(HTML) 13 Page - NXP Semiconductors |
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13 / 24 page ![]() 1997 Apr 01 13 Philips Semiconductors Preliminary specification 1K dual mode serial EEPROM PCB2421 7 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k Ω series resistor. 8 DC CHARACTERISTICS VDD = 4.5 to 5.5 V; VSS =0V; Tamb =0to+70 °C; unless otherwise specified. 9 EEPROM CHARACTERISTICS VDD = 4.5 to 5.5 V; VSS =0V; Tamb =0to+70 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDD supply voltage −0.3 +7.0 V Vn input voltage on any pin measured via 500 Ω resistor −0.5 VDD(max) + 0.5 V II DC input current −10 +10 mA IO DC output current −10 +10 mA Ptot total power dissipation − 150 mW Po power dissipation per output − 50 mW Tstg storage temperature without EEPROM retention −65 +150 °C with EEPROM retention −65 +70 °C Tamb operating ambient temperature 0 +70 °C Ves electrostatic discharge note 1 −2000 +2000 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDD supply voltage 4.5 − 5.5 V VIH HIGH level input voltage (pins 3, 5 and 6) 0.7VDD −− V VIL LOW level input voltage (pins 3, 5 and 6) −− 0.3VDD V VIH(7) HIGH level input voltage (pin 7) 2.0 −− V VIL(7) LOW level input voltage (pin 7) −− 0.8 V VOL LOW level output voltage IOL = 3 mA; VDD = 4.5 V −− 0.4 V ILI input leakage current VI = 0 to 5.5 V −10 − +10 µA ILO output leakage current VO = 0 to 5.5 V −10 − +10 µA IDD(write) operating write current fSCL = 100 kHz; VDD = 5.5 V −− 1000 µA IDD(read) operating read current fSCL = 100 kHz; VDD = 5.5 V −− 400 µA IDD(st) standby current VDD = 5.5 V; DDC2B mode; VCLK = SDA = SCL = VDD −− 30 µA SYMBOL PARAMETER MIN. MAX. UNIT tWR EEPROM write time − 20 ms NCYC EEPROM endurance 10000 − E/W cycles tRET EEPROM retention 10 − years |
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