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IRLR7807ZPBF 数据表(PDF) 1 Page - International Rectifier |
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IRLR7807ZPBF 数据表(HTML) 1 Page - International Rectifier |
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1 / 11 page  www.irf.com 1 12/8/04 IRLR7807ZPbF IRLU7807ZPbF HEXFET® Power MOSFET Notes through
are on page 11 Applications Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free D-Pak IRLR7807Z I-Pak IRLU7807Z PD - 95777A VDSS RDS(on) max Qg (typ.) 30V 13.8m Xà 7.0nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation g W PD @TC = 100°C Maximum Power Dissipation g Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 3.75 RθJA Junction-to-Ambient (PCB Mount) gà ––– 50 °C/W RθJA Junction-to-Ambient ––– 110 40 Max. 43 f 30 f 170 ± 20 30 0.27 20 300 (1.6mm from case) -55 to + 175 |
类似零件编号 - IRLR7807ZPBF |
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类似说明 - IRLR7807ZPBF |
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