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PCD3349AP 数据表(PDF) 10 Page - NXP Semiconductors |
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PCD3349AP 数据表(HTML) 10 Page - NXP Semiconductors |
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10 / 20 page ![]() 1998 May 11 10 Philips Semiconductors Product specification 8-bit microcontroller with DTMF generator PCD3349A 13 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); see note 1 and 2. Notes 1. Stresses above those listed under Limiting Values may cause permanent damage to the device. 2. Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless otherwise noted. 14 HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, it is good practice to take normal precautions appropriate to handling MOS devices (see “Handling MOS devices”). 15 DC CHARACTERISTICS VDD = 1.8 to 6 V; VSS =0V; Tamb = −25 to +70 °C; all voltages with respect to VSS; fxtal = 3.58 MHz (gmL); unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT VDD supply voltage −0.5 +7.0 V VI all input voltages −0.5 VDD + 0.5 V II, IO DC input or output current −10 +10 mA Ptot total power dissipation − 125 mW PO power dissipation per output − 30 mW ISS ground supply current −50 +50 mA Tstg storage temperature −65 +150 °C Tj operating junction temperature − 90 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply (see Figs 5 to 9) VDD supply voltage operating; note 1 1.8 − 6V RAM data retention in Stop mode 1.0 − 6V IDD operating supply current; note 2 VDD = 3 V; value HGF ≠ 0 and/or LGF ≠ 0 − 0.9 1.8 mA VDD =3V − 0.3 0.6 mA VDD =5V; fxtal = 10 MHz (gmL) − 1.1 3.0 mA VDD =5V; fxtal = 16 MHz (gmM) − 1.7 5.0 mA VDD =5V; fxtal = 16 MHz (gmH) − 2.5 6.0 mA IDD(idle) supply current Idle mode; note 2 VDD = 3 V; value HGF ≠ 0 and/or LGF ≠ 0 − 0.7 1.4 mA VDD = 3 V; value HGF = LGF = 0 − 0.2 0.4 mA VDD =5V; fxtal = 10 MHz (gmL) − 0.8 1.6 mA VDD =5V; fxtal = 16 MHz (gmM) − 1.2 4.0 mA VDD =5V; fxtal = 16 MHz (gmH) − 1.7 5.0 mA IDD(stp) supply current Stop mode VDD = 1.8 V; Tamb =25 °C; note 3 − 1.0 2.5 µA VDD = 1.8 V; Tamb =70 °C; note 3 −− 10 µA |
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