STTH8R06DI datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Characteristics

STTH8R06

4/12

Figure 7.

Reverse recovery charges

versus dIF/dt (typical values)

Figure 8.

Softness factor versus

dIF/dt (typical values)

100

150

200

250

300

350

200

400

600

800

1000

Q (nC)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

dI /dt(A/µs)

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

0.65

0.70

200

400

600

800

1000

S factor

2 x I

T =125°C

F(AV)

≤

V =400V

dI /dt(A/µs)

Figure 9.

Relative variations of dynamic

parameters versus junction

temperature

Figure 10.

Transient peak forward voltage

versus dIF/dt (typical values)

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

100

125

IRM

QRR

S factor

T (°C)

I=I

Reference: T =125°C

F(AV)

V =400V

100

200

300

400

500

(V)

dI /dt(A/µs)

I=I

T =125°C

F(AV)

Figure 11.

Forward recovery time versus

dIF/dt (typical values)

Figure 12.

Junction capacitance versus

reverse voltage applied

(typical values)

100

120

140

160

100

200

300

400

500

t (ns)

dI /dt(A/µs)

I=I

T =125°C

F(AV)

=1.1 x V max.

100

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

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