数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

ISC032N12LM6 数据表(PDF) 4 Page - Infineon Technologies AG

部件名 ISC032N12LM6
功能描述  MOSFET OptiMOSTM 6 Power-Transistor, 120 V
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

ISC032N12LM6 数据表(HTML) 4 Page - Infineon Technologies AG

  ISC032N12LM6 Datasheet HTML 1Page - Infineon Technologies AG ISC032N12LM6 Datasheet HTML 2Page - Infineon Technologies AG ISC032N12LM6 Datasheet HTML 3Page - Infineon Technologies AG ISC032N12LM6 Datasheet HTML 4Page - Infineon Technologies AG ISC032N12LM6 Datasheet HTML 5Page - Infineon Technologies AG ISC032N12LM6 Datasheet HTML 6Page - Infineon Technologies AG ISC032N12LM6 Datasheet HTML 7Page - Infineon Technologies AG ISC032N12LM6 Datasheet HTML 8Page - Infineon Technologies AG ISC032N12LM6 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 11 page
background image
4
OptiMOSTM6Power-Transistor,120V
ISC032N12LM6
Rev.2.0,2023-10-12
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
120
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.2
1.7
2.2
V
VDS=VGS,ID=110µA
Zero gate voltage drain current
IDSS
-
-
0.1
10
1.0
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C1)
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
-
2.8
3.7
5.3
3.2
4.5
9.0
m
Ω
VGS=10V,ID=50A
VGS=4.5V,ID=25A
VGS=3.3V,ID=14.6A
Gate resistance
RG
0.4
0.8
1.2
Ω
-
Transconductance
gfs
67
130
-
S
|VDS|
≥2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
4400
5700
pF
VGS=0V,VDS=60V,f=1MHz
Output capacitance
1)
Coss
-
1000
1300
pF
VGS=0V,VDS=60V,f=1MHz
Reverse transfer capacitance
1)
Crss
-
23
40
pF
VGS=0V,VDS=60V,f=1MHz
Turn-on delay time
td(on)
-
9.3
-
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=1.6
Ω
Rise time
tr
-
5.3
-
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=1.6
Ω
Turn-off delay time
td(off)
-
29.6
-
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=1.6
Ω
Fall time
tf
-
9.0
-
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=1.6
Ω
Table6Gatechargecharacteristics2)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
11.5
15
nC
VDD=60V,ID=25A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
7.5
9.4
nC
VDD=60V,ID=25A,VGS=0to4.5V
Gate to drain charge
1)
Qgd
-
11
16.5
nC
VDD=60V,ID=25A,VGS=0to4.5V
Switching charge
Qsw
-
15.1
-
nC
VDD=60V,ID=25A,VGS=0to4.5V
Gate charge total
1)
Qg
-
33
41
nC
VDD=60V,ID=25A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.6
-
V
VDD=60V,ID=25A,VGS=0to4.5V
Gate charge total
1)
Qg
-
62
82
nC
VDD=60V,ID=25A,VGS=0to10V
Output charge
1)
Qoss
-
111
148
nC
VDS=60V,VGS=0V
1) Defined by design. Not subject to production test.
2) See
″Gate charge waveforms″ for parameter definition



Html Pages

1 2 3 4 5 6 7 8 9 10 11


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com