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AS58C1001 数据表(PDF) 2 Page - Austin Semiconductor |
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AS58C1001 数据表(HTML) 2 Page - Austin Semiconductor |
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2 / 22 page ![]() EEPROM EEPROM EEPROM EEPROM EEPROM AS58C1001 Austin Semiconductor, Inc. AS58C1001 Rev. 5.0 7/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 End Of Life For more products and information please visit our web site at www.austinsemiconductor.com 128K x 8 EEPROM EEPROM Memory AVAILABLE AS MILITARY SPECIFICATIONS ! SMD 5962-38267 ! MIL-STD-883 FEATURES ! High speed: 150, 200, and 250ns ! Data Retention: 10 Years ! Low power dissipation, active current (20mW/MHz (TYP)), standby current (100 µW(MAX)) ! Single +5V (+10%) power supply ! Data Polling and Ready/Busy Signals ! Erase/Write Endurance (10,000 cycles in a page mode) ! Software Data protection Algorithm ! Data Protection Circuitry during power on/off ! Hardware Data Protection with RES pin ! Automatic Programming: Automatic Page Write: 10ms (MAX) 128 Byte page size OPTIONS MARKINGS ! Timing 150ns access -15 200ns access -20 250ns access -25 ! Packages Ceramic LCC ECA No. 208 Ceramic Flat Pack F No. 306 Radiation Shielded Ceramic FP* SF No. 305 Ceramic SOJ DCJ No. 508 Plastic SOP DG ! Operating Temperature Ranges -Military (-55oC to +125oC) XT -Industrial (-40oC to +85oC) IT *NOTE: Package lid is connected to ground (Vss). 32-Pin LCC (ECA) GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58C1001 is capable or in system electrical Byte and Page reprogrammability. The AS58C1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology. This device has a 128-Byte Page Programming function to make its erase and write operations faster. The AS58C1001 features Data Polling and a Ready/Busy signal to indicate completion of erase and programming operations. This EEPROM provides several levels of data protection. Hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit during power on and off. Software data protection is implemented using JEDEC Optional Standard algorithm. The AS58C1001 is designed for high reliability in the most demanding applications. Data retention is specified for 10 years and erase/write endurance is guaranteed to a minimum of 10,000 cycles in the Page Mode. PIN ASSIGNMENT (Top View) 32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ), 32-Pin SOP (DG) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 RDY/BUSY\ A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 Vss Vcc A15 RES\ WE\ A13 A8 A9 A11 OE\ A10 CE\ I/O 7 I/O 6 I/O 5 I/O 4 I/O 3 4 3 2 1 32 31 30 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 A14 A13 A8 A9 A11 OE\ A10 CE\ I/O 7 |
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