IRF7828 datasheet(2/6 Pages) IRF

2 / 6 page

IRF7828

www.irf.com

Parameter

Min

Typ

Max

Units

Conditions

Diode Forward

–

1.0

S = 10A, VGS = 0V

Voltage*

Reverse Recovery

–

di/dt ~ 700A/µs

DS = 16V, VGS = 0V, IS = 15A

Reverse Recovery

rr(s)

–

di/dt = 700A/µs

Charge (with Parallel

(with 10BQ040)

Schottky)

DS = 16V, VGS = 0V, IS = 15A

Source-Drain Rating & Characteristics

Charge

Notes: Repetitive rating; pulse width limited by max. junction temperature.

Pulse width

≤ 400 µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board

Typ = measured - Q

oss

Typical values of RDS(on) measured at V

GS = 4.5V, QG, QSW and QOSS

measured at V

GS = 5.0V, IF = 10A.

Parameter

Min

Typ

Max

Units

Conditions

Drain-to-Source

DSS

–

GS = 0V, ID = 250µA

Breakdown Voltage

Static Drain-Source

DS(on)

–

9.5

12.5

Ω

GS = 4.5V, ID = 10A

on Resistance

Gate Threshold Voltage

GS(th)

1.0

–

DS = VGS,ID = 250µA

Drain-Source Leakage

DSS

–

1.0

= 24V, V

= 0

Current*

–

150

µA

DS = 24V, VGS = 0,

Tj = 125°C

Gate-Source Leakage

GSS

–

±100

GS = ±20V

Current

Total Gate Chg Cont FET

–

9.2

GS= 5.0V,

D=15A, VDS=16V

Total Gate Chg Sync FET

–

7.3

–

GS = 5V, VDS< 100mV

Pre-Vth

GS1

–

2.5

–

DS = 15V, ID = 10A

Gate-Source Charge

Post-Vth

GS2

–

0.8

–

Gate-Source Charge

Gate to Drain Charge

–

2.9

–

Switch Chg(Q

gs2 + Qgd)

–

3.7

–

Output Charge

oss

–

6.1

–

DS = 10V, VGS = 0

Gate Resistance

–

2.3

–

Ω

Turn-on Delay Time

d (on)

–

6.3

–

DD = 15V, ID = 10A

Rise Time

–

2.7

–

GS = 4.5V

Turn-off Delay Time

d (off)

–

9.7

–

Clamped Inductive Load

Fall Time

–

7.3

–

Input Capacitance

iss

–

1010

–

Output Capacitance

oss

–

360

–

DS = 15V, VGS = 0

Reverse Transfer Capacitance C

rss

–

110

–

Electrical Characteristics

Current

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