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LEUWS2WN-RASA-CQ 数据表(PDF) 3 Page - OSRAM GmbH |
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LEUWS2WN-RASA-CQ 数据表(HTML) 3 Page - OSRAM GmbH |
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3 / 20 page ![]() LE UW S2WN 3 Version 1.2 | 2020-06-03 Characteristics I F = 1000 mA; TS = 25 °C; per chip Parameter Symbol Values Chromaticity Coordinate 3) Cx Cy typ. typ. 0.31 0.32 Viewing angle at 50% I V 2φ typ. 130 ° Radiating surface A color typ. 2.1 x 2.1 mm² Partial Flux acc. CIE 127:2007 4) I F = 1000 mA Φ E/V, 120° typ. 0.77 Forward Voltage 5) I F = 1000 mA; per Chip V F min. typ. max. 2.70 V 3.00 V 3.40 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/solderpoint 6) R thJS real typ. max. 1.20 K / W 1.40 K / W Electrical thermal resistance junction/solderpoint 6) with efficiency η e = 29 % R thJS elec. typ. max. 0.85 K / W 0.99 K / W Brightness Groups Group Luminous Flux 1) Luminous Flux 1) I F = 1000 mA I F = 1000 mA min. max. Φ V Φ V RA 1120 lm 1400 lm RB 1400 lm 1800 lm SA 1800 lm 2240 lm |
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