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2

isc Silicon NPN Power Transistor

TTD1410B

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO

Collector-Emitter Breakdown Voltage

IC= -50uA; IB= 0

-40

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -2A; IB= -0.2A

--

-0.8

V

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

--

-1

uA

IEBO

Emitter Cutoff Current

VEB= -4V; IC= 0

--

-1

uA

hFE

DC Current Gain

IC= -0.5A ; VCE=-3V

120

270

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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