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PCF1179CT 数据表(PDF) 10 Page - NXP Semiconductors |
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PCF1179CT 数据表(HTML) 10 Page - NXP Semiconductors |
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10 / 20 page ![]() 1997 Apr 16 10 Philips Semiconductors Product specification 4-digit duplex LCD car clock PCF1179C CHARACTERISTICS VDD =3to6V; VSS =0V; Tamb = −40 to +85 °C; crystal: f = 4.194304 MHz; Rs =50 Ω; CL = 12 pF; maximum frequency tolerance = ±30 × 10−6; unless otherwise specified. Note 1. A suitable resistor (R) must be selected (example): a) VDD = 5 V; R max. (12 V − 5 V)/700 µA = 10 kΩ. b) VDD = 5 V; R typ. (12 V − 5 V)/900 µA = 7.8 kΩ (more reserve). c) IDD must not exceed 3 mA. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VDD supply voltage voltage regulator programmed to 4.5 V at Tamb =25 °C 3 − 6V ∆V DD supply voltage variation S1 or S2 closed −− 50 mV TC supply voltage variation due to temperature −−0.35 − %/K VDD = 4.5 V −−16 − mV/K IDD supply current note 1 700 950 −µA CEXT capacitance external capacitor 47 −−µF Oscillator tosc start time −− 200 ms ∆f/f frequency deviation nominal n = 0 0 60 × 10−6 110 × 10−6 ∆f/f frequency stability ∆VDD = 100 mV −− 1 × 10−6 Rfb feedback resistance 300 1000 3000 k Ω Ci input capacitance − 16 − pF Co output capacitance − 27 − pF Inputs RO pull-up resistance S1, S2, TS, SEL and DATA 45 90 180 k Ω RO pull-up/pull-down resistance MODE 100 300 1000 k Ω IIL leakage current ENABLE, FLASH −− 2 µA td debounce time S1 and S2 only 30 65 100 ms VPP programming voltage IO2 output current VPP =VDD − 5V 70 − 700 µA during programming − 500 −µA Backplane (high and low levels) RBP output resistance ±100 µA −− 3k Ω Segment RSEG output resistance ±100 µA −− 5k Ω LCD Voffset(DC) DC offset voltage 200 k Ω/1 nF −− 50 mV |
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