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BUL98 数据表(PDF) 4 Page - STMicroelectronics |
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BUL98 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Electrical characteristics BUL98 4/10 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE =0) VCE = 800V VCE = 800V Tj = 125°C 100 500 µA µA ICEO Collector-emitter current (IB =0) VCE = 450V 100 µA VCEO(sus)(1) Collector-emitter sustaining voltage (IB = 0) IC =10mA L = 25mH 450 V VEBO Emitter-base voltage (IC = 0) IE =10mA 9V VCE(sat) (1) Collector-emitter saturation voltage IC =5A _ _ IB =1A IC =9A _ _ IB =1.8A IC =12A __ _ IB =2.4A 0.15 0.3 0.5 0.5 0.8 1.5 V V V VBE(sat) (1) Base-emitter saturation voltage IC =5A _ _ IB =1A IC =9A _ _ IB =1.8A IC =12A __ _ IB =2.4A 0.95 1 1.1 1.2 1.3 1.4 V V V hFE (1) DC current gain IC =10mA VCE =5V IC =5A VCE =5V 10 15 35 ts tf Inductive load Storage time Fall time VCL =350V IC =9A VBE(off) =-5V IB1 =1.8A L =200 µH RBB(off) =0Ω (see figure 8) 1.1 55 1.8 100 µs ns ts tf Inductive load Storage time Fall time VCL =350V IC =9A VBE(off) =-5V IB1 =1.8A L =200 µH RBB(off) =0Ω Tj = 100°C (see figure 8) 1.5 80 µs ns |
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