MCP6031ESLASHST datasheet(5/30 Pages) MICROCHIP

5 / 30 page

DS22041A-page 5

MCP6031/2/3/4

TEMPERATURE SPECIFICATIONS

1.1

Test Circuits

The test circuits used for the DC and AC tests are

shown in Figure 1-2 and Figure 1-3. The bypass

capacitors are laid out according to the rules discussed

in Section 4.6 “Supply Bypass”.

FIGURE 1-2:

AC and DC Test Circuit for Most Non-Inverting Gain Conditions.

FIGURE 1-3:

AC and DC Test Circuit for Most Inverting Gain Conditions.

Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Operating Temperature Range

-40

—

+125

°C

Note

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 8L-SOIC

θJA

—163

—

°C/W

Thermal Resistance, 8L-MSOP

θJA

—206

—

°C/W

Thermal Resistance, 14L-SOIC

θJA

—

120

—

°C/W

Thermal Resistance, 14L-TSSOP

θJA

—

100

—

°C/W

Note:

The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.

VDD

VOUT

MCP603X

VIN

VDD

0.1 µF

2.2 µF

VIN

VDD

VOUT

MCP603X

0.1 µF

2.2 µF

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