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ISF1103 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISF1103
功能描述  isc N-Channel MOSFET Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISF1103 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISF1103 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISF1103 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISF1103 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc N-Channel MOSFET Transistor
ISF1103
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
200
--
--
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID= 0.25mA
2
--
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 3A
--
--
0.7
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
--
--
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS= 0
--
--
10
uA
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
--
224
--
nF
Coss
Output Capacitance
--
45
--
pF
Crss
Reverse Transfer Capacitance
--
24
--
pF
Qg
Total Gate Charge
VDD = 160V,
ID = 5A,
VGS = 10V
--
15
--
nC
Qgs
Gate-Source Charge
--
1.5
--
nC
Qgd
Gate-Drain Charge
--
8
--
nC
td(on)
Turn-on Delay Time
VDD =100V,
ID = 5A,
RG = 25Ω,
VGS = 10V
--
33
--
ns
tr
Turn-on Rise Time
--
5.2
--
ns
td(off)
Turn-off Delay Time
--
88
--
ns
tf
Turn-off Fall Time
--
20
--
ns
Drain - Source Body Diode Characteristics
ISD
Continuous Source Current
Tc = 25 ºC
--
--
5
A
ISM
Pulsed Source Current
--
--
20
VSD
Diode Forward Voltage
IS= 6A; VGS= 0
--
--
1.2
V
trr
Reverse Recovery Time
VGS = 0V,IS = 5.0A
diF/dt = 100A /μs
--
114
--
ns
Qrr
Reverse Recovery Charge
--
0.5
--
uC



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