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ISF1114 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISF1114
功能描述  N-Channel MOSFET
PDF  5 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISF1114 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISF1114 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISF1114 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISF1114 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISF1114 Datasheet HTML 4Page - Inchange Semiconductor Company Limited ISF1114 Datasheet HTML 5Page - Inchange Semiconductor Company Limited  
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ISF1114
N-Channel MOSFET
www.iscsemi.com
2
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.52
℃
/W
ELECTRICAL CHARACTERISTICS (TJ = 25ºC, unless otherwise noted)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0, ID= 0.25mA
500
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS= 500V, VGS= 0,TJ = 25ºC
-
-
1
uA
VDS= 500V, VGS= 0,TJ = 125ºC
-
-
100
uA
IGSS
Gate-Body Leakage Current
VGS= ±30V, VDS= 0
-
-
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= 0.25mA
2.0
-
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V, ID= 9A
-
0.28
0.33
Ω
RG
Gate Resistance
f = 1.0MHz open drain
--
1.5
--
Ω
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
-
3040
-
pF
Coss
Output Capacitance
-
232
-
Crss
Reverse Transfer Capacitance
-
4.1
-
Qg
Total Gate Charge
VDD = 400V,
ID = 18A,
VGS = 10V
-
49.9
-
nC
Qgs
Gate-Source Charge
-
18.5
-
Qgd
Gate-Drain Charge
-
12.6
-
td(on)
Turn-on Delay Time
VDD = 250V,
ID = 18A,
RG = 10Ω,
VGS = 10V
-
28
-
ns
tr
Turn-on Rise Time
-
47
-
td(off)
Turn-off Delay Time
-
57
-
tf
Turn-off Fall Time
-
40
-
Drain - Source Body Diode Characteristics
IS
Continuous Diode Forward Current
Tc = 25 ºC
-
-
18
A
ISM
Diode Pulsed Current
-
-
72



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