APT20M18B2VR datasheet(1/4 Pages) ADPOW

部件名	APT20M18B2VR

功能描述	POWER MOS V MOSFET

PDF	4 Pages

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制造商	ADPOW [Advanced Power Technology]

网页	http://www.advpowertech.com

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MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

G

D

S

Power MOS V® is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V®

also achieves faster switching speeds through optimized gate layout.

• TO-264 MAX Package

• Avalanche Energy Rated

• Faster Switching

• Lower Leakage

POWER MOS V® MOSFET

APT20M18B2VR

A20M18LVR

200V 100A

0.018Ω

Ω

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250µA)

Drain-Source On-State Resistance 2 (V

GS = 10V, ID = 50A)

Zero Gate Voltage Drain Current (V

DS = 200V, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 160V, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Gate Threshold Voltage (V

DS = VGS, ID = 2.5mA)

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J,TSTG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current 6 @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current 1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

µA

nA

Volts

MIN

TYP

MAX

200

0.018

25

250

±100

24

APT20M18B2VR_LVR

200

100

400

±30

±40

625

5.00

-55 to 150

300

100

50

3000

T-MAX™

TO-264

B2VR

LVR

类似零件编号 - APT20M18B2VR

制造商	部件名	数据表	功能描述
Advanced Power Technolo...	APT20M18B2VR	39Kb / 2P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Inchange Semiconductor ...	APT20M18B2VR	420Kb / 2P	isc N-Channel MOSFET Transistor

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APT20M18B2VR 数据表(PDF) 1 Page - Advanced Power Technology

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APT20M18B2VR 数据表(PDF) 1 Page - Advanced Power Technology

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