QPB0206N

2 – 6 GHz GaN Amplifier

Data Sheet Rev. A, May 2023 | Subject to change without notice

- 2 of 13 -

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Absolute Maximum Ratings

Parameter

Value / Unit

Prime Power (VDC)*

32 V

Drain Current (ID_DRIVE)

47 A

RF Input Power

42 dBm

Operating Temperature*

–40 to +71 °C

Storage Temperature

–40 to +85 °C

Operation of this device outside the parameter ranges given above may

cause permanent damage. These are stress ratings only, and functional

operation of the device at these conditions is not implied.

* Rating for thermal reliability

Recommended Operating Conditions

Parameter

Value / Unit

Drain Voltage (VD)

24 V

Quiescent Drain Current (IDQ)

20 A

Operating Drain Current (ID)

35 A

Operating Temperature **

–40 to +71 °C

Electrical specifications are measured at specified test conditions.

Specifications are not guaranteed over all recommended operating

conditions.

** Refers to outside clamp surface temperature

Electrical Specifications

Parameter

Cond.

Min

Typ

Max

Units

Frequency

2

6

GHz

Saturated POUT, CW (PIN = 36 dBm)

2 GHz

4 GHz

6 GHz

55.7

54.0

54.3

dBm

dBm

dBm

Power-Added Efficiency, CW (PIN = 36 dBm)

2 GHz

4 GHz

6 GHz

36.3

31.8

32.0

%

%

%

Power Gain (CW, PIN = 36 dBm)

18.3

dB

Small Signal Gain (S21)

32.2

dB

Input Return Loss

16

dB

Switching Time (PW=500 ns, F= 4 GHz, PIN=36 dBm)

ENABLE to RF ON

138

ns

ENABLE to RF OFF

162

ns

Input RF Interface

SMA (F)

Output RF Interface

Type N (F)

Weight: Amp + Bias Card

16.5 (7.48)

lbs. (kg)

Amp + Bias Card + One/Two Capacitor Bank(s)

17.0 (7.71) / 17.5 (7.94)

lbs. (kg)

Dimensions: Amp + Bias Card (L) x (W) x (H)

11.33 x 3.4 x 3.4 (287.8 x 86.4 x 86.4)

inch (mm)

Amp + Bias Card + One Capacitor Bank

11.33 x 4.1 x 3.4 (287.8 x 104.1 x 86.4)

inch (mm)

Amp + Bias Card + Two Capacitor Banks

11.33 x 4.8 x 3.4 (287.8 x 121.9 x 86.4)

inch (mm)

Test conditions unless otherwise noted: VDC = 24 V, IDQ = 20 A, CW, T = 25 °C