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PCF8570 数据表(PDF) 9 Page - NXP Semiconductors

部件名 PCF8570
功能描述  256 x 8-bit static low-voltage RAM with I2C-bus interface
PDF  20 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PCF8570 数据表(HTML) 9 Page - NXP Semiconductors

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1999 Jan 06
9
Philips Semiconductors
Product specification
256
× 8-bit static low-voltage RAM with
I2C-bus interface
PCF8570
11 DC CHARACTERISTICS
VDD = 2.5 to 6.0 V; VSS = 0 V; Tamb = −40 to +85 °C; unless otherwise specified.
Notes
1. The Power-on reset circuit resets the I2C-bus logic when VDD <VPOR. The status of the device after a Power-on reset
condition can be tested by sending the slave address and testing the acknowledge bit.
2. If the input voltages are a diode voltage above or below the supply voltage VDD or VSS an input current will flow; this
current must not exceed
±0.5 mA.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VDD
supply voltage
2.5
6.0
V
IDD
supply current
standby mode
VI =VDD or VSS;
fSCL = 0 Hz;
Tamb = −25 to +70 °C
−−
5
µA
operating mode
VI =VDD or VSS;
fSCL = 100 Hz
−−
200
µA
VPOR
Power-on reset voltage
note 1
1.5
1.9
2.3
V
Inputs, input/output SDA
VIL
LOW level input voltage
note 2
−0.8
0.3VDD
V
VIH
HIGH level input voltage
note 2
0.7VDD
VDD + 0.8 V
IOL
LOW level output current
VOL = 0.4 V
3
−−
mA
ILI
input leakage current
VI =VDD or VSS
−1
+1
µA
Inputs A0, A1, A2 and TEST
ILI
input leakage current
VI =VDD or VSS
−250
+250
nA
Inputs SCL and SDA
Ci
input capacitance
VI =VSS
−−
7pF
Low VDD data retention
VDDR
supply voltage for data retention
1
6V
IDDR
supply current
VDDR =1V
−−
5
µA
VDDR =1V;
Tamb = −25 to +70 °C
−−
2
µA
Power-saving mode (see Figs 13 and 14)
IDDR
supply current
TEST = VDD; Tamb =25 °C
50
400
nA
tHD2
recovery time
50
−µs



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