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PCF8570T 数据表(PDF) 8 Page - NXP Semiconductors |
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PCF8570T 数据表(HTML) 8 Page - NXP Semiconductors |
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8 / 20 page ![]() 1999 Jan 06 8 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with I2C-bus interface PCF8570 9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). 10 HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take precautions appropriate to handling MOS devices. Advice can be found in Data Handbook IC12 under “Handling MOS Devices”. SYMBOL PARAMETER MIN. MAX. UNIT VDD supply voltage (pin 8) −0.8 +8.0 V VI input voltage (any input) −0.8 VDD + 0.8 V II DC input current −±10 mA IO DC output current −±10 mA IDD positive supply current −±50 mA ISS negative supply current −±50 mA Ptot total power dissipation per package − 300 mW PO power dissipation per output − 50 mW Tamb operating ambient temperature −40 +85 °C Tstg storage temperature −65 +150 °C Fig.9 Master reads slave immediately after first byte (READ mode). andbook, full pagewidth S 1A SLAVE ADDRESS DATA A1 DATA acknowledgement from slave acknowledgement from slave acknowledgement from slave R/W auto increment word address MBD824 auto increment word address n bytes last bytes P |
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