9NM60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R205-081.I



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

600

V

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

10

µA

Gate- Source Leakage Current

Forward

IGSS

VGS=30V

100

nA

Reverse

VGS=-30V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.5

4.5

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=4.5A

0.56

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0MHz

590

pF

Output Capacitance

COSS

530

pF

Reverse Transfer Capacitance

CRSS

57

pF

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

QG

VDS=480V, VGS=10V, ID=9.0A ,

IG=1mA (Note 1, 2)

24

nC

Gate to Source Charge

QGS

5.2

nC

Gate to Drain Charge

QGD

18.2

nC

Turn-ON Delay Time (Note 1)

tD(ON)

VDD=100V, VGS=10V, ID=9.0A,

RG=25Ω (Note 1, 2)

8.8

ns

Rise Time

tR

24

ns

Turn-OFF Delay Time

tD(OFF)

64

ns

Fall-Time

tF

33.5

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

9

A

Maximum Body-Diode Pulsed Current

ISM

18

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=9.0A,VGS=0V

1.4

V

Reverse Recovery Time (Note 1)

trr

IS=9.0A,VGS=0V,

dIF/dt=100A/μs

310

ns

Reverse Recovery Charge

Qrr

7.83

μC

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.