ISF1119 datasheet(1/2 Pages) ISC

部件名	ISF1119

功能描述	P-Channel Power MOSFET

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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ISF1119

eq 2SJ217

P-Channel Power MOSFET

www.iscsemi.com

1

DESCRIPTION

·

Drain Current –ID= -45A@ TC=25℃

·

Drain Source Voltage-

: VDSS= -60V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) = 42mΩ(Max)

·

High speed switching

APPLICATIONS

·High speed power switching

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

-60

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous

-45

A

IDM

Drain Current-Single Pulsed

-180

A

PD

Total Dissipation @TC=25℃

150

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃

/W

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