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ISTM4022 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISTM4022 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISTM4022 eq TZ530N Thyristor Module www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VT on-state voltage Tvj = 25℃ , IT = 15900A -- -- 2.25 V V(TO) threshold voltage Tvj = Tvj max -- -- 0.95 V rT slope resistance Tvj = Tvj max -- -- 0.51 mΩ IGT gate trigger current VD =12V,Tvj = 25℃ VD =12V,Tvj = -40℃ -- -- 300 400 mA VGT gate trigger voltage VD =12V,Tvj = 25℃ VD =12V,Tvj = -40℃ -- -- 2.0 3.5 V IGD gate non-trigger current VD = 2/3VDRM -- -- 10 mA VGD gate non-trigger voltage VD = 2/3VDRM -- -- 0.5 V IH holding current VD = 6 V,RA= ∞, Tvj = 25℃ -- -- 500 mA IL latching current TVJ=25℃; tp=30us; VD=12V IG=1A; diG/dt=1A/us -- -- 1000 mA tgd gate controlled delay time TVJ=25℃; VD=1/2VDRM IG=1A; diG/dt=1A/us -- 4 -- us tq TVJ=TVJM; IT=500A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM -- 200 -- us Rth j-c DC current -- -- 0.0405 ℃ /W Rth j-k DC current -- -- 0.01 ℃ /W dS Creeping distance on surface -- 12.7 -- mm dA Creepage distance in air -- 9.6 -- mm a Allowable acceleration -- 60 -- m/s2 |
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