L8211

LINEAR INTEGRATED CIRCUIT

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R123-008,C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

-0.6 ~ +12

V

Supply Current

ICC

100

mA

Input Voltage

VIN

25 Continuous

V

Drain Current (per FET)(set by RCAL)

ID

0 ~ 15

mA

Power Dissipation(Ta=25°C)

PD

600

mW

Operating Temperature

TOPR

-40~+70

°C

Storage Temperature

TSTG

-50~+85

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

(Ta=25°C, VCC=5V, ID=10mA, RCAL=33KΩ, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Supply Voltage

VCC

5

10

V

Supply Current

ICC

ID1 to ID3=0

6

15

mA

ID1 =0, ID2 to ID3=10mA,VPOL=14V

25

35

mA

ID2=0, ID1 to ID3=10mA,VPOL=15.5V

25

35

mA

ID1 to ID3=0,ILB=10mA

16

25

mA

ID1 to ID3=0,IHB=10mA

16

25

mA

Substrate Voltage

VSUB

(Internally generated) ISUB =0

-3.5

-3

-2.5

V

ISUB = -200µA

-2.4

V

Output Noise

Gate Voltage

ENG

CG=4.7nF,CD=10nF

0.005

Vpkpk

Drain Voltage

END

CG=4.7nF,CD=10nF

0.02

Vpkpk

Oscillator Freq

fO

200

350

800

kHz

GATE CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Current Range

IGO

-30

2000

µA

Output Voltage

Gate 1

Off

VG1O

ID1=0mA, VPOL=14V, IGO1=0µA

-0.05

0

0.05

V

Low

VG1L

ID1=12mA, VPOL=15.5V, IGO1=-10µA

-2.7

-2.4

-2

V

High

VG1H

ID1=8mA, VPOL=15.5V, IGO1=0µA

0.4

0.75

1.0

V

Output Voltage

Gate 2

Off

VG2O

ID2=0mA, VPOL=15.5V, IGO2=0µA

-0.05

0

0.05

V

Low

VG2L

ID2=12mA, VPOL=14V, IGO2=-10µA

-2.7

-2.4

-2

High

VG2H

ID2=8mA, VPOL=14V, IGO2=0µA

0.4

0.75

1.0

Output Voltage

Gate 3

Low

VG3L

ID3=12mA, IGO3=-10µA

-3.5

-2.9

-2

V

High

VG3H

ID3=8mA, IGO3=0µA

0.4

0.75

1.0

DRAIN CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Current

ID

8

10

12

mA

Current Change

With VCC

△

IDV

VCC=5 ~ 10V

0.5

%/V

With TJ

△

IDT

TJ =-40 ~ +70°C

0.05

%/°C

Drain 1 Voltage: High

VD1

ID1=10mA,VPOL=15.5V

1.8

2

2.2

V

Drain 2 Voltage: High

VD2

ID2=10mA,VPOL=14V

1.8

2

2.2

V

Drain 3 Voltage: High

VD3

ID3=10mA

1.8

2

2.2

V

Voltage Change

With VCC

△

VDV

VCC =5 ~ 10V

0.5

%/V

With TJ

△

VDT

TJ =-40 ~ +70°C

50

ppm

Leakage Current

Drain 1

ILEAK1

VD1=0.5V,VPOL=14V

10

µA

Drain 2

ILEAK2

VD2=0.5V,VPOL=15.5V

10

µA