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PDIUSBH12 数据表(PDF) 18 Page - NXP Semiconductors |
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PDIUSBH12 数据表(HTML) 18 Page - NXP Semiconductors |
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18 / 28 page ![]() Philips Semiconductors Product specification PDIUSBH12 USB 2-port hub 1999 Jul 22 18 RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNIT VCC DC supply voltage 3.0 3.6 V VI DC input voltage range 0 5.5 V VI/O DC input voltage range for I/O 0 5.5 V VAI/O DC input voltage range for analog I/O 0 VCC V VO DC output voltage range 0 VCC V Tamb Operating ambient temperature range in free air See DC and AC characteristics per device –40 85 °C ABSOLUTE MAXIMUM RATINGS1 SYMBOL PARAMETER TEST CONDITIONS MIN MAX UNIT VCC DC supply voltage –0.5 +4.6 V IIK DC input diode current VI < 0 –50 mA VI DC input voltage Note 2 –0.5 +5.5 V VI/O DC input voltage range for I/O’s –0.5 VCC + 0.5 V IOK DC output diode current VO > VCC or VO < 0 ±50 mA VO DC output voltage Note 2 –0.5 VCC + 0.5 V IO DC output sink or source current for other pins VO = 0 to VCC ±15 mA IO DC output sink or source current for D+/D– pins VO = 0 to VCC ±50 mA IGND, ICC DC VCC or GND current ±100 mA VESD Electrostatic discharge voltage IIL < 1 µA 3 — ±4000 4 V TSTG Storage temperature range –60 +150 °C PTOT Power dissipation per package NOTES: 1. Stresses beyond those listed may cause damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those listed in the RECOMMENDED OPERATING CONDITIONS table is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 3. Values are given for device only: in-circuit VESD(MAX) = ±8000 V. 4. For open-drain pins VESD(MAX) = ±2000 V. |
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