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BZP62 数据表(PDF) 2 Page - Zetex Semiconductors |
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BZP62 数据表(HTML) 2 Page - Zetex Semiconductors |
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2 / 4 page ![]() BZP61 / BZP62 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter Symbol Unit Test condition BZP61-22 BZP62-22 5.5 BZP61-27 BZP62-27 4.5 BZP61-33 BZP62-33 3.8 Z-current (continuous) BZP61-39 BZP62-39 IZ 3.3 A Tc = 25°C Mean forward current IF(AV) 35 A sinusoidal, f = 15 - 1000 Hz 600 TJ = 25°C, half-sine wave, ≤ 10 ms Surge forward current IFSM 500 A TJ = 175°C, half-sine wave, ≤ 10 ms 1800 TJ = 25°C, half-sine wave, ≤ 10 ms Maximum rated value ∫i²dt 1250 A²s TJ = 175°C, half-sine wave, ≤ 10 ms Repetitive peak forward current IFRM=π*IF(AV) 110 A f = 15 - 1000 Hz Effective forward current IF(RMS) 55 A sinusoidal, f = 15 - 1000 Hz Junction temperature TJmax 140 °C Storage temperature range Tstg - 50 to + 140 °C Thermal resistance Parameter Symbol Value Unit Junction to case RθJC 0.8 °C/W Issue 2 – August 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 |
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