STB33N60DM2 datasheet(1/2 Pages) ISC

部件名	STB33N60DM2

功能描述	N-Channel MOSFET Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

ISF1137

eq STB33N60DM2

N-Channel MOSFET Transistor

www.iscsemi.com

1

FEATURES

· Drain Current -ID= 24A@ TC=25℃

· Drain Source Voltage -VDSS= 600V(Min)

· Static Drain-Source On-Resistance

-RDS(on) = 0.13Ω(Max)@VGS= 10V

· Fast-recovery body diode

APPLICATIONS

· Switching applications

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

600

V

VGS

Gate-Source Voltage-Continuous

±

25

V

ID

Drain Current-Continuous

24

A

IDM

Drain Current-Single Pulse

96

A

PD

Total Dissipation @TC=25℃

190

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.66

℃

/W

类似零件编号 - STB33N60DM2

制造商	部件名	数据表	功能描述
STMicroelectronics	STB33N60DM2	1Mb / 20P	N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages November 2015 Rev 2

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