M95080 datasheet(44/45 Pages) STMICROELECTRONICS

44 / 45 page

Revision history

M95160, M95080

44/45

24-May-2007

Document reformatted. Small text changes.

TSSOP8 3 x 3 mm (DS) package removed, 1.65 V to 5.5 V operating

voltage range removed (M95080-S and M95160-S removed).

Figure 4: Bus master and memory devices on the SPI bus updated, note 2

removed and explanatory paragraph added (see Section 3: Connecting to

the SPI bus).

Section 2.7: VCC supply voltage and Section 2.8: VSS ground added.

Power-up, Device Internal Reset and Power-down replaced by

Section 4.1: Supply voltage (VCC).

Command termination specified in Section 6.4: Write Status Register

(WRSR).

Blank process no longer available for M95160, M95080, M95160-W and

M95080-W in the device grade 3 range.

L, GB and SB processes no longer available for M95160 and M95080, in

the device grade 6 range.

L process no longer available for M95160-W and M95080-W in the device

grade 6 range.

ICC1 value and test conditions modified in Table 18: DC characteristics

(M95160-R and M95080-R).

End timing line of tSHQZ modified in Figure 17: Output timing.

SO8N and UFDFPN8 package specifications updated. All packages are

ECOPACK® compliant.

Blank option removed below Plating technology and Note 2 modified in

Table 27: Ordering information scheme.

Table 28: Available M95160 products (package, voltage range,

temperature grade) and Table 29: Available M95080 products (package,

voltage range, temperature grade) added.

Table 30.

Document revision history

Date

Revision

Changes

M95080 数据表(PDF) 44 Page - STMicroelectronics

M95080 数据表(HTML) 44 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

数据表下载