TSL26721 datasheet(8/47 Pages) OSRAM

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ams Datasheet

Page 7

[v1-01] 2019-Nov-20

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TSL2672 − Absolute Maximum Ratings

Figure 7:

Operating Characteristics; VDD = 3 V, TA = 25°C (unless otherwise noted)

Figure 8:

Proximity Characteristics; VDD = 3 V, TA = 25°C, PGAIN = 1´, PEN = 1 (unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

IDD

Supply current

Active — LDR pulse OFF

200

250

μA

Wait state

Sleep state - no I²C

activity

2.2

VOL

INT, SDA output low voltage

3 mA sink current

0.4

6 mA sink current

0.6

ILEAK

Leakage current, SDA, SCL,

INT pins

−5

μA

ILEAK

Leakage current, LDR pin

−5

μA

VIH

SCL, SDA input high voltage

TSL26721, TSL26725

0.7 VDD

TSL26723, TSL26727

1.25

VIL

SCL, SDA input low voltage

TSL26721, TSL26725

0.3 VDD

TSL26723, TSL26727

0.54

Parameter

Test Conditions

Min

Typ

Max

Unit

IDD

Supply current

LDR pulse ON

ADC conversion time

step size

PTIME = 0xFF

2.58

2.73

2.9

ADC number of

integration steps (1)

256

steps

ADC counts per

step (1)

PTIME = 0xFF

1023

counts

ADC count value

λp = 850 nm, Ee = 263.4μW/cm2,

PTIME = 0xFB, PPULSE = 4

CH0 diode

1500

2000

2500

counts

CH1 diode

900

1200

1500

ADC output

responsivity

λp = 850 nm, PTIME = 0xFB,

PPULSE = 1

CH0 diode

1.90

counts/

μW/

cm2

CH1 diode

1.14

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