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PDTC124EE 数据表(PDF) 2 Page - NXP Semiconductors

部件名 PDTC124EE
功能描述  NPN resistor-equipped transistor
PDF  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PDTC124EE 数据表(HTML) 2 Page - NXP Semiconductors

  PDTC124EE Datasheet HTML 1Page - NXP Semiconductors PDTC124EE Datasheet HTML 2Page - NXP Semiconductors PDTC124EE Datasheet HTML 3Page - NXP Semiconductors PDTC124EE Datasheet HTML 4Page - NXP Semiconductors PDTC124EE Datasheet HTML 5Page - NXP Semiconductors PDTC124EE Datasheet HTML 6Page - NXP Semiconductors PDTC124EE Datasheet HTML 7Page - NXP Semiconductors PDTC124EE Datasheet HTML 8Page - NXP Semiconductors  
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1998 Jul 31
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC124EE
FEATURES
• Built-in bias resistors R1 and R2
(typ. 22 k
Ω each)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in
an SC-75; SOT416 plastic package.
PNP complement: PDTA124EE.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground
3
collector/output
Fig.1
Simplified outline (SC-75; SOT416) and symbol.
handbook, halfpage
MAM346
1
2
3
Top view
12
3
R1
R2
Fig.2
Equivalent inverter
symbol.
MGA893 - 1
1
3
2
MARKING
TYPE
NUMBER
MARKING
CODE
PDTC124EE
06
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
−−
50
V
IO
output current (DC)
−−
100
mA
ICM
peak collector current
−−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−−
150
mW
hFE
DC current gain
IC = 5 mA; VCE =5V
60
−−
R1
input resistor
15.4
22
28.6
k
Ω
resistor ratio
0.8
1
1.2
R2
R1
-------



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