K130 datasheet(5/18 Pages) STMICROELECTRONICS

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TSV991-TSV992-TSV994

Electrical characteristics

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Electrical characteristics

Table 3.

Electrical characteristics at VCC = +2.5V, VDD = 0V, Vicm = VCC/2, Tamb=25°C,

RL connected to VCC/2 (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Offset voltage

TSV99x

-0.1

4.5

Tmin < Top < Tmax

7.5

TSV99xA

1.5

Tmin < Top < Tmax

DVio

Input offset voltage drift

µV/°C

Iio

Input offset current(1)

(Vout =VCC/2)

Iib

Input bias current(1)

(Vout =VCC/2)

CMR

Common mode rejection ratio

20 log (

ΔVic/ΔVio)

0V to 2.5V, Vout = 1.25V

Avd

Large signal voltage gain

RL= 10kΩ, Vout= 0.5V to 2V

VCC-VOH High level output voltage

RL =10kΩ

RL =600Ω

150

VOL

Low level output voltage

RL =10kΩ

RL =600Ω

150

Iout

Isink

Vo = 2.5V

Tmin < Tamb < Tmax

Isource

Vo = 0V

Tmin < Tamb < Tmax

ICC

Supply current (per operator)

No load, Vout=VCC/2

0.78

1.1

Tmin < Top < Tmax

1.1

AC performance

GBP

Gain bandwidth product

RL =2kΩ, CL = 100pF, f = 100kHz

MHz

φm

Phase margin

RL =2kΩ, CL = 100pF, G=5,

f=100kHz

-60-

Degrees

Gain margin

RL =2kΩ, CL = 100pF, φm=40°

2.5

Slew rate

RL =2kΩ, CL = 100pF

V/µs

Equivalent input noise voltage

f=10kHz

THD+en Total harmonic distortion

G=1, f=1kHz, Rl=2k

Ω,

BW=22kHz, Vicm=(Vcc+1)/2,

Vout=1.1Vpp

0.0017

Guaranteed by design.

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