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1AD8539ARMZ-R2 数据表(PDF) 5 Page - Analog Devices

部件名 1AD8539ARMZ-R2
功能描述  Low Power, Precision, Auto-Zero Op Amps
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

1AD8539ARMZ-R2 数据表(HTML) 5 Page - Analog Devices

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AD8538/AD8539
Rev. A | Page 5 of 24
AD8539 ELECTRICAL SPECIFICATIONS
@ VS = 5.0 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise specified.
Table 3.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
5
15
μV
−40°C ≤ TA ≤ +125°C
30
μV
Input Bias Current
IB
15
60
pA
−40°C ≤ TA ≤ +85°C
35
125
pA
−40°C ≤ TA ≤ +125°C
0.7
1.0
nA
Input Offset Current
IOS
20
70
pA
−40°C ≤ TA ≤ +125°C
400
pA
Input Voltage Range
0
5
V
−40°C ≤ TA ≤ +125°C
0.2
4.8
V
Common-Mode Rejection Ratio
CMRR
VCM = 0 V to 5 V
115
135
dB
−40°C ≤ TA ≤ +125°C, VCM = 0.2 V to 4.8 V
100
130
dB
Large Signal Voltage Gain
AVO
RL = 10 kΩ, VO = 0.1 V to 4.9 V
110
130
dB
−40°C ≤ TA ≤ +125°C
110
125
dB
Offset Voltage Drift
ΔV
OS
/
ΔT
−40°C ≤ TA ≤ +125°C
0.03
0.1
μV/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 100 kΩ to ground
4.99
4.994
V
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to ground
4.98
V
RL = 10 kΩ to ground
4.95
4.97
V
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to ground
4.94
V
Output Voltage Low
VOL
RL = 100 kΩ to V+
5
7
mV
−40°C ≤ TA ≤ +125°C, RL = 100 kΩ to V+
6
8
mV
RL = 10 kΩ to V+
20
25
mV
−40°C ≤ TA ≤ +125°C, RL = 10 kΩ to V+
24
30
mV
Short-Circuit Limit
ISC
±25
mA
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = 2.7 V to 5.0 V
105
125
dB
−40°C ≤ TA ≤ +125°C
100
125
dB
Supply Current/Amplifier
ISY
IO = 0
170
210
μA
−40°C ≤ TA ≤ +125°C
225
μA
DYNAMIC PERFORMANCE
Slew Rate
SR
RL =10 kΩ
0.4
V/μs
Settling Time 0.01%
tS
G = ±1, 2 V step, CL = 20 pF, RL = 1 kΩ
10
μs
Overload Recovery Time
0.05
ms
Gain Bandwidth Product
GBP
430
kHz
Phase Margin
ØM
RL = 10 kΩ, RL = 100 kΩ, CL = 20 pF
65
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
f = 0.1 Hz to 10 Hz
1.2
μV p-p
Voltage Noise Density
en
f = 1 kHz
52
nV/
√Hz



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