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CDBF0145 数据表(PDF) 1 Page - Comchip Technology

部件名 CDBF0145
功能描述  SMD Schottky Barrier Diode
PDF  2 Pages
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制造商  COMCHIP [Comchip Technology]
网页  http://www.comchiptech.com
标志 COMCHIP - Comchip Technology

CDBF0145 数据表(HTML) 1 Page - Comchip Technology

  CDBF0145 Datasheet HTML 1Page - Comchip Technology CDBF0145 Datasheet HTML 2Page - Comchip Technology  
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Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
IR
CT
Min Typ
9
Max
0.55
1
Io = 100 mA
VR = 45 Volt s
CDBF0145
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
Unit
V
uA
pF
Conditions
I F = 100 mA DC
VR = 10 V
f = 1MHz, and 10 VDC reverse voltage
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , surge peak
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol
VRRM
VR
Io
IFSM
PD
TSTG
T j
Min
-40
-40
Max
50
45
100
250
+125
+125
Typ
1000
Unit
V
V
mA
mA
mW
C
C
Maximum Rating ( at T A = 25 C unless otherwise noted )
Electrical Characteristics ( at T A = 25 C unless otherwise noted )
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
(Lead-free Device)
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current (IR=0.1uA typ.
@VR=10V).
Majority carrier conduction.
Mechanical data
Case:
1005 (2512) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.006 gram (approximately).
SMD Diodes Specialist
COMCHIP
Page 1
REV:A
QW-A1020
0.102(2.60)
0.095(2.40)
0.020(0.50) Typ.
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
1005(2512)
0.012 (0.30) Typ.
0.020(0.50) Typ.


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