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MUR1620ISC 数据表(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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MUR1620ISC 数据表(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
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1 / 2 page ![]() Features TO-220AB/TO-220-3L Unit:inch(mm) ※ ThinkiSemi latest&matured process FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power Supply,Motor Control,UPS and SMPS etc. Mechanical Data ※ Case: Heatsink open metal TO-220AB/TO-220-3L package ※ Epoxy: UL 94V-0rateflame retardant ※ Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable per MIL-STD-202 method 208 ※ Polarity: As marked on diode body ※ Mounting position: Any ※ Weight: 2.0 gram approximately MUR1620ISC thru MUR16120ISC Pb Free Plating Product MUR1620ISC thru MUR16120ISC Pb 16.0 Ampere Heatsink Electrically Isolated Series Connection Ultra Fast Recovery Rectifiers Positive Negative Insulated Common Cathode Insulated Common Anode Doubler Insulated Doubler Polarity Series Insulated Series Connection Suffix "ICA" Suffix "IDP" Suffix "ISC" Suffix "ICC" .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54) .1(2.54) .387(9.85) © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2 Rev.14T MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UNIT VRRM 200 400 600 800 1000 1200 V VRMS 140 280 420 560 700 840 V VDC 200 400 600 800 1000 1200 V IF(AV) A IFSM A VF (Typical) 0.85-0.95 1.00-1.25 1.25-1.50 V IR μA μA Trr nS CJ pF RθJC ℃ /W TJ,TSTG ℃ Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 80 Typical Thermal Resistance (Note 3) 1.5 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125℃ (Total Device 2x8.0A=16.0A) 16.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method)(Per Diode/Per Leg) 160 Maximum Instantaneous Forward Voltage @8.0A(Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25℃ At Rated DC Blocking Voltage @TJ=125℃ 1.0 100 1.50-1.70 25-50 50-75 MUR1620ISC MUR1640ISC MUR1660ISC MUR1680ISC MUR16100ISC MUR16120ISC ※ Internal ceramic(alumina) insulated package Heat-sink(copper base plate) N/C(None Collect) |
类似零件编号 - MUR1620ISC |
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类似说明 - MUR1620ISC |
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